Comparison of buried and implanted tunnel junction as current confinement schemes for the realisation of single transverse mode large diameter (50µm) 1.55µm InP-based electrically-pumped VECSELs - CentraleSupélec Accéder directement au contenu
Communication Dans Un Congrès Année : 2006

Comparison of buried and implanted tunnel junction as current confinement schemes for the realisation of single transverse mode large diameter (50µm) 1.55µm InP-based electrically-pumped VECSELs

Résumé

We compared buried (BTJ) and ion implanted tunnel junction (ITJ) as current confinement schemes for 1550nm ½-VCSELs. Reduced thermal resistance is obtained for BJT, but reduced current crowding is evidenced for ITJ. Singletransverse mode laser emission is obtained from large diameters devices.
Fichier non déposé

Dates et versions

hal-00250093 , version 1 (09-02-2008)

Identifiants

Citer

Adel Bousseksou, Sophie Bouchoule, Martin Strassner, Isabelle Sagnes, Joel Jacquet, et al.. Comparison of buried and implanted tunnel junction as current confinement schemes for the realisation of single transverse mode large diameter (50µm) 1.55µm InP-based electrically-pumped VECSELs. IEEE Leos annual meeting, Oct 2006, Montréal, Canada. pp.516-517, ⟨10.1109/LEOS.2006.278746⟩. ⟨hal-00250093⟩
111 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More