Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy - Archive ouverte HAL

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Journal Articles Superlattices and Microstructures Year : 2006

Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy

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José Alvarez

Function : Author
PersonId : 5252
IdHAL : jose-alvarez
ORCID : 0000-0003-3558-8302
IdRef : 089018222

Laboratoire de génie électrique de Paris

Frédéric Houzé

Function : Author
PersonId : 13067
IdHAL : frederic-houze
ORCID : 0000-0001-8054-3184
IdRef : 15620584X

Laboratoire de génie électrique de Paris

Jean-Paul Kleider

Function : Author
PersonId : 5984
IdHAL : jean-paul-kleider
ORCID : 0000-0003-4388-6326
IdRef : 03273039X

Laboratoire de génie électrique de Paris

M. Liao

Function : Author

Y. Koide

Function : Author

Olivier Schneegans : Connect in order to contact the contributor

https://hal-centralesupelec.archives-ouvertes.fr/hal-00320288

Submitted on : Wednesday, September 10, 2008-4:09:29 PM

Last modification on : Friday, March 24, 2023-2:52:50 PM

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hal-00320288 , version 1 (10-09-2008)

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HAL Id : hal-00320288 , version 1

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José Alvarez, Frédéric Houzé, Jean-Paul Kleider, M. Liao, Y. Koide. Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy. Superlattices and Microstructures, 2006, 40, pp.343-349. ⟨hal-00320288⟩

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