Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy - Archive ouverte HAL Access content directly
Conference Papers Year : 2006

Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy

José Alvarez
M. Liao
  • Function : Author
Y. Koide
  • Function : Author
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Dates and versions

hal-00320298 , version 1 (10-09-2008)

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  • HAL Id : hal-00320298 , version 1

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José Alvarez, Frédéric Houzé, Jean-Paul Kleider, M. Liao, Y. Koide. Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy. E-MRS 2006, 2006, France. ⟨hal-00320298⟩
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