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Journal Articles Semiconductor Science and Technology Year : 2005

Determination of defect levels parameters in semiinsulating GaAs:Cr from transient photocurrent experiment

H. Belgacem
  • Function : Author
A. Merazga
  • Function : Author
Christophe Longeaud
Laboratoire de génie électrique de Paris

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https://hal-centralesupelec.archives-ouvertes.fr/hal-00321234

Submitted on : Friday, September 12, 2008-4:06:14 PM

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hal-00321234 , version 1 (12-09-2008)

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  • HAL Id : hal-00321234 , version 1

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H. Belgacem, A. Merazga, Christophe Longeaud. Determination of defect levels parameters in semiinsulating GaAs:Cr from transient photocurrent experiment. Semiconductor Science and Technology, 2005, 20, pp.56-61. ⟨hal-00321234⟩

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SUPELEC UPMC EC-PARIS CNRS SUP_LGEP CENTRALESUPELEC UNIV-PARIS-SACLAY SORBONNE-UNIVERSITE
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