Light-intensity dependence of the steady state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors - Archive ouverte HAL Access content directly
Journal Articles Thin Solid Films Year : 2005

Light-intensity dependence of the steady state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors

J.A. Schmidt
  • Function : Author
Christophe Longeaud
Laboratoire de génie électrique de Paris
Jean-Paul Kleider
Laboratoire de génie électrique de Paris
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https://hal-centralesupelec.archives-ouvertes.fr/hal-00321248

Submitted on : Friday, September 12, 2008-4:17:55 PM

Last modification on : Friday, March 24, 2023-2:52:50 PM

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hal-00321248 , version 1 (12-09-2008)

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  • HAL Id : hal-00321248 , version 1

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J.A. Schmidt, Christophe Longeaud, Jean-Paul Kleider. Light-intensity dependence of the steady state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors. Thin Solid Films, 2005, 493, pp.319-324. ⟨hal-00321248⟩

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SUPELEC UPMC EC-PARIS CNRS SUP_LGEP CENTRALESUPELEC UNIV-PARIS-SACLAY SORBONNE-UNIVERSITE
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