Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates - CentraleSupélec Access content directly
Journal Articles Journal of Non-Crystalline Solids Year : 2006

Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates

Marie-Estelle Gueunier-Farret
Laboratoire de génie électrique de Paris
CV
Cyril Bazin
  • Function : Author
Laboratoire de génie électrique de Paris
Jean-Paul Kleider
Laboratoire de génie électrique de Paris
CV
Christophe Longeaud
Laboratoire de génie électrique de Paris
P. Bulkin
  • Function : Author
D. Daineka
  • Function : Author
T.H. Dao
  • Function : Author
Pere Roca I Cabarrocas
P. Descamps
  • Function : Author
T. Kervyn de Meerenedre
  • Function : Author
P. Loempoel
  • Function : Author
M. Meaudre
  • Function : Author
R. Meaudre
  • Function : Author

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https://hal-centralesupelec.archives-ouvertes.fr/hal-00321731

Submitted on : Monday, September 15, 2008-5:30:59 PM

Last modification on : Friday, March 24, 2023-2:52:50 PM

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hal-00321731 , version 1 (15-09-2008)

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  • HAL Id : hal-00321731 , version 1

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Marie-Estelle Gueunier-Farret, Cyril Bazin, Jean-Paul Kleider, Christophe Longeaud, P. Bulkin, et al.. Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates. Journal of Non-Crystalline Solids, 2006, 352, pp.1913-1916. ⟨hal-00321731⟩

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