Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by electron cyclotron resonance - Archive ouverte HAL Access content directly
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Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by electron cyclotron resonance

T.H. Dao
  • Function : Author
Marie-Estelle Gueunier-Farret
Laboratoire de génie électrique de Paris
CV
D. Daineka
  • Function : Author
P. Bulkin
  • Function : Author
Pere Roca I Cabarrocas
Jean-Paul Kleider
Laboratoire de génie électrique de Paris
CV
Christophe Longeaud
Laboratoire de génie électrique de Paris
Cyril Bazin
  • Function : Author
Laboratoire de génie électrique de Paris
T. Kervyn de Meerenedre
  • Function : Author
P. Descamps
  • Function : Author
P. Loempoel
  • Function : Author

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https://hal-centralesupelec.archives-ouvertes.fr/hal-00321911

Submitted on : Tuesday, September 16, 2008-10:49:03 AM

Last modification on : Friday, March 24, 2023-2:52:50 PM

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hal-00321911 , version 1 (16-09-2008)

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  • HAL Id : hal-00321911 , version 1

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T.H. Dao, Marie-Estelle Gueunier-Farret, D. Daineka, P. Bulkin, Pere Roca I Cabarrocas, et al.. Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by electron cyclotron resonance. E-MRS 2006 Spring Meeting, 2006, France. ⟨hal-00321911⟩

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