Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates

A. Ougazzaden , D.J. Rogers , F. Hosseini Teherani , T. Moudakir , S. Gautier , T. Aggerstam , S. Ould Saad , J. Martin , Zakaria Djebbour (1) , O. Durand , G. Garry , A. Lusson , D. Mcgrouther , J.N. Chapman

1 LGEP - Laboratoire de génie électrique de Paris

A. Ougazzaden, D.J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, et al.. Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates. E-MRS 2007 Spring Meeting, 2007, France. ⟨hal-00322269⟩