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Polymorphous silicon thin films deposited at high rate: transport properties and density of states

Yrebegnan Moussa Soro
  • Function : Author
Laboratoire de génie électrique de Paris
A. Abramov
  • Function : Author
Marie-Estelle Gueunier-Farret
Laboratoire de génie électrique de Paris
CV
E.V. Johnson
CV
Christophe Longeaud
Laboratoire de génie électrique de Paris
Pere Roca I Cabarrocas
Jean-Paul Kleider
Laboratoire de génie électrique de Paris
CV

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https://hal-centralesupelec.archives-ouvertes.fr/hal-00322303

Submitted on : Wednesday, September 17, 2008-11:35:31 AM

Last modification on : Friday, March 24, 2023-2:52:51 PM

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hal-00322303 , version 1 (17-09-2008)

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  • HAL Id : hal-00322303 , version 1

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Yrebegnan Moussa Soro, A. Abramov, Marie-Estelle Gueunier-Farret, E.V. Johnson, Christophe Longeaud, et al.. Polymorphous silicon thin films deposited at high rate: transport properties and density of states. E-MRS 2007 Spring Meeting, 2007, France. ⟨hal-00322303⟩

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