High diffusion length silicon germanium alloy thin films deposited by pulsed rf PECVD method

P. Chaudhuri; A. Bhaduri; A. Bandyopadhyay; S. Vignoli; P.P. Ray; Christophe Longeaud

Journal Articles Journal of Non-Crystalline Solids Year : 2008

High diffusion length silicon germanium alloy thin films deposited by pulsed rf PECVD method

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P. Chaudhuri

Function : Author

A. Bhaduri

Function : Author

A. Bandyopadhyay

Function : Author

S. Vignoli

Function : Author

P.P. Ray

Function : Author

Christophe Longeaud

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PersonId : 6409
IdHAL : christophe-longeaud
IdRef : 076747425

Laboratoire de génie électrique de Paris

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Submitted on : Wednesday, January 7, 2009-4:56:01 PM

Last modification on : Friday, March 24, 2023-2:52:51 PM

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hal-00350868 , version 1 (07-01-2009)

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P. Chaudhuri, A. Bhaduri, A. Bandyopadhyay, S. Vignoli, P.P. Ray, et al.. High diffusion length silicon germanium alloy thin films deposited by pulsed rf PECVD method. Journal of Non-Crystalline Solids, 2008, 354, pp.2105. ⟨hal-00350868⟩

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High diffusion length silicon germanium alloy thin films deposited by pulsed rf PECVD method

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