Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2008

Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements

Jean-Paul Kleider
Laboratoire de génie électrique de Paris
CV
A.S. Gudovskikh
  • Function : Author
Pere Roca I Cabarrocas

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https://hal-centralesupelec.archives-ouvertes.fr/hal-00350871

Submitted on : Wednesday, January 7, 2009-4:58:15 PM

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hal-00350871 , version 1 (07-01-2009)

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  • HAL Id : hal-00350871 , version 1

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Jean-Paul Kleider, A.S. Gudovskikh, Pere Roca I Cabarrocas. Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements. Applied Physics Letters, 2008, 92, pp.162101. ⟨hal-00350871⟩

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SUPELEC UPMC EC-PARIS CNRS SUP_LGEP CENTRALESUPELEC UNIV-PARIS-SACLAY SORBONNE-UNIVERSITE
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