Characterization of defects in semi-insulating SiC by means of Photoinduced current transient spectroscopy and modulated photocurrent technique - Archive ouverte HAL Access content directly
Conference Papers Year : 2008

Characterization of defects in semi-insulating SiC by means of Photoinduced current transient spectroscopy and modulated photocurrent technique

Christophe Longeaud
Laboratoire de génie électrique de Paris
Jean-Paul Kleider
Laboratoire de génie électrique de Paris
CV
P. Kaminski
  • Function : Author
R. Kozlowski
  • Function : Author

Olivier Schneegans  : Connect in order to contact the contributor

https://hal-centralesupelec.archives-ouvertes.fr/hal-00351230

Submitted on : Thursday, January 8, 2009-4:56:09 PM

Last modification on : Friday, March 24, 2023-2:52:51 PM

Not file

Dates and versions

hal-00351230 , version 1 (08-01-2009)

Identifiers

  • HAL Id : hal-00351230 , version 1

Cite

Christophe Longeaud, Jean-Paul Kleider, P. Kaminski, R. Kozlowski. Characterization of defects in semi-insulating SiC by means of Photoinduced current transient spectroscopy and modulated photocurrent technique. XI International Conference “Physics of dielectrics”, Jun 2008, St Petersbourg, Russia. pp.CD-ROM Proceedings. ⟨hal-00351230⟩

Export

BibTeX TEI Dublin Core DC Terms EndNote Datacite

Collections

SUPELEC UPMC EC-PARIS CNRS SUP_LGEP CENTRALESUPELEC UNIV-PARIS-SACLAY SORBONNE-UNIVERSITE
116 View
0 Download

Share

Gmail Facebook Twitter LinkedIn More