GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by MBE

Laurent Cerutti (1, 2) , Arnaud Ducanchez (1) , Grégoire Narcy (1) , Pierre Grech (1) , G. Boissier (1) , Arnaud Garnache (1, 3) , Eric Tournié (1, 2) , Frédéric Genty (4)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge
3 TéHO - Térahertz, hyperfréquence et optique
4 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes

We report the growth conditions and operations of electrically pumped monolithic Sb-based type-I quantum-well vertical cavity surface emitting lasers (VCSELs) emitting above 2.2 µm. The structures were grown on (001)-GaSb substrates by molecular beam epitaxy(MBE)and are made of two N-type GaSb/AlAsSb Bragg reflectors,a GaInAsSb/AlGaAsSb multiquantum-well active region and an InAsSb/GaSb tunnel junction. Growth conditions have been optimized for each target wavelength. Laser emission in CW up to 293K at 2.3 µm and in pulsed regime at 2.52 µm at room temperature(RT)is demonstrated. These are the longest wavelength achieved with electrically pumped VCSELs to date.

Keywords: Antimonides; Laser diodes; Molecular beam epitaxy; Quantum wells

Domains: Physics [physics]; Physics [physics]; Optics [physics.optics]

Laurent Cerutti, Arnaud Ducanchez, Grégoire Narcy, Pierre Grech, G. Boissier, et al.. GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by MBE. Journal of Crystal Growth, 2009, 311 (7), pp.1912-1916. ⟨10.1016/j.jcrysgro.2008.11.026⟩. ⟨hal-00380447⟩