Mid-Infrared GaSb-based EP-VCSEL emitting at 2.63 µm

Arnaud Ducanchez (1) , Laurent Cerutti (1, 2) , Pierre Grech (1) , Frédéric Genty (3) , Eric Tournié (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge
3 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes

Electrically-pumped GaSb-based vertical-cavity surface-emitting lasers emitting up to 2.63 µm at room temperature are reported. The whole structure was grown monolithically in one run by solid-source molecular beam epitaxy. This heterostructure is composed of two n-doped AlAsSb/GaSb DBRs, a type-I GaInAsSb/AlGaAsSb multi-quantum-well active region and an InAsSb/GaSb tunnel junction. A quasi-CW (1 µs, 5 %) operation was obtained at room temperature for 35 µm-diameter devices with threshold current of 85 mA.

Mots clés: mid-infrared vertical-cavity surface-emitting lasers; electrically pumping; solid-source molecular beam epitaxy; multi-quantum-well active region; tunnel junction; temperature 293 K to 298 K; size 35 mum; current 85 mA; AlAsSb-GaSb

Domaines: Optique [physics.optics]

Arnaud Ducanchez, Laurent Cerutti, Pierre Grech, Frédéric Genty, Eric Tournié. Mid-Infrared GaSb-based EP-VCSEL emitting at 2.63 µm. Electronics Letters, 2009, 45 (5), pp.265-266. ⟨10.1049/el:20090134⟩. ⟨hal-00380609⟩