Study of the interfacial properties of amorphous Silicon/n-type crystalline Silicon heterojunction through static coplanar conductance measurements - Archive ouverte HAL Access content directly
Journal Articles physica status solidi (c) Year : 2010

Study of the interfacial properties of amorphous Silicon/n-type crystalline Silicon heterojunction through static coplanar conductance measurements

Wilfried Favre
  • Function : Author
Laboratoire de génie électrique de Paris
M. Labrune
  • Function : Author
Foudil Dadouche
  • Function : Author
Laboratoire de génie électrique de Paris
A.S. Gudovskikh
  • Function : Author
Pere Roca I Cabarrocas
Jean-Paul Kleider
Laboratoire de génie électrique de Paris
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https://hal-centralesupelec.archives-ouvertes.fr/hal-00555226

Submitted on : Wednesday, January 12, 2011-5:18:17 PM

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hal-00555226 , version 1 (12-01-2011)

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  • HAL Id : hal-00555226 , version 1

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Wilfried Favre, M. Labrune, Foudil Dadouche, A.S. Gudovskikh, Pere Roca I Cabarrocas, et al.. Study of the interfacial properties of amorphous Silicon/n-type crystalline Silicon heterojunction through static coplanar conductance measurements. physica status solidi (c), 2010, 7 (3), pp.1037-1040. ⟨hal-00555226⟩

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