Electrical characterization of phosphorus doped silicon nanowires - Archive ouverte HAL

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Conference Papers Year : 2010

Electrical characterization of phosphorus doped silicon nanowires

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1

José Alvarez

Function : Author
PersonId : 5252
IdHAL : jose-alvarez
ORCID : 0000-0003-3558-8302
IdRef : 089018222

Laboratoire de génie électrique de Paris

Irène Ngo

Function : Author

Laboratoire de génie électrique de Paris

Marie-Estelle Gueunier-Farret

Function : Author
PersonId : 14061
IdHAL : marie-gueunier-farret
ORCID : 0000-0003-1615-498X
IdRef : 166935093

Jean-Paul Kleider

Function : Author
PersonId : 5984
IdHAL : jean-paul-kleider
ORCID : 0000-0003-4388-6326
IdRef : 03273039X

Laboratoire de génie électrique de Paris

Simon Perraud

Function : Author

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https://hal-centralesupelec.archives-ouvertes.fr/hal-00555247

Submitted on : Wednesday, January 12, 2011-5:22:56 PM

Last modification on : Tuesday, February 14, 2023-3:36:49 AM

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hal-00555247 , version 1 (12-01-2011)

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HAL Id : hal-00555247 , version 1

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José Alvarez, Irène Ngo, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Simon Perraud. Electrical characterization of phosphorus doped silicon nanowires. MRS Spring Meeting, Apr 2010, San Francisco, United States. ⟨hal-00555247⟩

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