Performances of a High Q 65-nm CMOS Active Inductor for Mobile Applications Transceivers

Fabien Robert (1, 2) , Philippe Cathelin (2) , Antoine Diet (3) , Martine Villegas (1) , Fabio Epifano (2) , Pascal Triaire (2) , Geneviève Baudoin (1)

1 ESYCOM - Electronique, Systèmes de communication et Microsystèmes
2 ST-CROLLES - STMicroelectronics [Crolles]
3 DRE - Département de Recherche en Electromagnétisme ; EMG - Département Electromagnétisme - L2S

In this paper we focus on the conception and performances of an highly linear active inductor providing a high quality factor. The device is designed, simulated and layouted to be used in the frame of cellular transceivers for mobile applications. This study details performances of the active inductor in 65-nm CMOS and especially linearity performances through post-layout simulations. In a goal of integration with newly developed transceivers architectures, we chose to conceive this active inductor in CMOS 65nm. The main interest of this paper is to show the capability in designing high quality factor (Q>1000) and highly linear CMOS active inductor. Linearity versus input power is enhanced to a wider range from -40 to 0dBm.

Domains: Engineering Sciences [physics]; Electronics

Fabien Robert, Philippe Cathelin, Antoine Diet, Martine Villegas, Fabio Epifano, et al.. Performances of a High Q 65-nm CMOS Active Inductor for Mobile Applications Transceivers. PRIME 2011, Jul 2011, Trento, Italy. ⟨hal-00658294⟩