High-Power Tunable Dilute Mode DFB Laser With Low RIN and Narrow Linewidth

Mickael Faugeron (1) , Michaël Tran (2) , Olivier Parillaud (3) , Mourad Chtioui (2) , Yannick Robert (2) , Eric Vinet (2) , Alain Enard (2) , Joël Jacquet (1) , Frederic van Dijk (2)

1 OPTEL - Equipe Optique et électronique pour les télécoms
2 III-V Lab - Alcatel-Thalès III-V lab
3 Thales Research and Technology [Palaiseau]

We have developed a 1-mm-long high-power DFB laser using an asymmetrical cladding based on the dilute waveguide technique. We have obtained about 180 mW output power at 25 °C and >30 mW at 15 °C-85 °C chip temperature with >55-dB sidemode suppression ratio. This temperature range allows a 9.7-nm wavelength tunability. For high output power, the relative intensity noise is lower than −160 dB/Hz in the 0.08-40-GHz frequency range and the optical linewidth is better than 300 kHz.

Mots clés: 1.5 μm distributed feedback lasers; high-power diode lasers; low relative intensity noise (RIN); narrow linewidth

Mickael Faugeron, Michaël Tran, Olivier Parillaud, Mourad Chtioui, Yannick Robert, et al.. High-Power Tunable Dilute Mode DFB Laser With Low RIN and Narrow Linewidth. IEEE Photonics Technology Letters, 2013, 25 (1), pp.7-10. ⟨10.1109/LPT.2012.2225419⟩. ⟨hal-00772368⟩