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Journal Articles Semiconductor Science and Technology Year : 2012

Characterization of thin polycrystalline silicon films deposited on glass by CVD

A.G. Benvenuto
  • Function : Author
R.H. Buitrago
  • Function : Author
Ayana Badhuri
  • Function : Author
J. A. Schmidt
  • Function : Author

Abstract

We deposited polycrystalline silicon (poly-Si) thin films on commercial float glass by chemical vapour deposition from trichlorosilane at temperatures between 735 and 870 °C. The structural properties of the films were evaluated by means of scanning electron microscopy, x-ray diffraction, atomic force microscopy, reflectance in the ultraviolet region and Raman spectroscopy. The electrical characterization involved measurements of dark conductivity and photoconductivity as a function of temperature, Hall effect, ambipolar diffusion length from the steady-state photocarrier grating technique and density of defects by means of modulated photoconductivity. By using boron tribromide as a doping agent, degrees of doping ranging from intrinsic to clearly p-doped were obtained. The process, the reactants and the substrate used are of low cost, and proved to be adequate for direct poly-Si deposition, giving films of good structural and electrical properties.

Dates and versions

hal-00778962 , version 1 (21-01-2013)

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A.G. Benvenuto, R.H. Buitrago, Ayana Badhuri, Christophe Longeaud, J. A. Schmidt. Characterization of thin polycrystalline silicon films deposited on glass by CVD. Semiconductor Science and Technology, 2012, 27 (12), pp.125013. ⟨10.1088/0268-1242/27/12/125013⟩. ⟨hal-00778962⟩
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