Study of the electronic transport properties of Zinc Indium Sulfide thin films deposited by Atomic Layer Deposition technique for solar cells applications - Archive ouverte HAL Access content directly
Conference Papers Year : 2012

Study of the electronic transport properties of Zinc Indium Sulfide thin films deposited by Atomic Layer Deposition technique for solar cells applications

Arouna Darga
Laboratoire de génie électrique de Paris
CV
Amir Fathallah
  • Function : Author
Laboratoire de génie électrique de Paris
Christophe Longeaud
Laboratoire de génie électrique de Paris
P. Genevée
  • Function : Author
F. Donsanti
  • Function : Author
D. Lincot
  • Function : Author

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Submitted on : Monday, January 21, 2013-3:57:53 PM

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hal-00779009 , version 1 (21-01-2013)

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  • HAL Id : hal-00779009 , version 1

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Arouna Darga, Amir Fathallah, Christophe Longeaud, P. Genevée, F. Donsanti, et al.. Study of the electronic transport properties of Zinc Indium Sulfide thin films deposited by Atomic Layer Deposition technique for solar cells applications. E-MRS Spring Meeting 2012, May 2012, Strasbourg, France. ⟨hal-00779009⟩

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