Fano Resonance Filtering Characteristic of High-Resistivity Silicon Photonic Crystal Slab in Terahertz Region - Archive ouverte HAL Access content directly
Journal Articles IEEE Photonics Technology Letters Year : 2012

Fano Resonance Filtering Characteristic of High-Resistivity Silicon Photonic Crystal Slab in Terahertz Region

Jiu-Sheng Li
  • Function : Author
Saïd Zouhdi

Abstract

We investigate experimentally and numerically the Fano resonances of terahertz waves through a high resistivity silicon photonic crystal slab with a hexagonal array of circular air holes. Finite-difference time-domain simulation and terahertz time-domain spectroscopy transmission measurement show good agreement with the data, in support of the Fano resonance mechanism. The frequency dependent transmission spectra show there is a Fano resonance bandpass filtering characteristic at the center frequency of 2.10 THz with a Q factor of 191, which is consistent with that of Fano resonance theory calculation.
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hal-00779091 , version 1 (21-01-2013)

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Jiu-Sheng Li, Saïd Zouhdi. Fano Resonance Filtering Characteristic of High-Resistivity Silicon Photonic Crystal Slab in Terahertz Region. IEEE Photonics Technology Letters, 2012, 24 (8), pp.625-627. ⟨10.1109/LPT.2012.2184088⟩. ⟨hal-00779091⟩
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