Temperature and Bias Dependence of Hydrogenated Amorphous Silicon/Crystalline Silicon Heterojunction Capacitance: The Link to Band Bending and Band Offsets - CentraleSupélec Access content directly
Conference Papers Year : 2013

Temperature and Bias Dependence of Hydrogenated Amorphous Silicon/Crystalline Silicon Heterojunction Capacitance: The Link to Band Bending and Band Offsets

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Submitted on : Wednesday, January 15, 2014-11:29:53 AM

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hal-00931318 , version 1 (15-01-2014)

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  • HAL Id : hal-00931318 , version 1

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Olga Maslova, Aurore Brézard-Oudot, Marie-Estelle Gueunier-Farret, José Alvarez, Wilfried Favre, et al.. Temperature and Bias Dependence of Hydrogenated Amorphous Silicon/Crystalline Silicon Heterojunction Capacitance: The Link to Band Bending and Band Offsets. ICANS 25, Aug 2013, Toronto, Canada. ⟨hal-00931318⟩

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