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Article Dans Une Revue Applied Physics Letters Année : 2014

Specific methodology for capacitance imaging by atomic force microscopy: A breakthrough towards an elimination of parasitic effects

Résumé

On the basis of a home-made nanoscale impedance measurement device associated with a commercial atomic force microscope, a specific operating process is proposed in order to improve absolute (in sense of “nonrelative”) capacitance imaging by drastically reducing the parasitic effects due to stray capacitance, surface topography, and sample tilt. The method, combining a two-pass image acquisition with the exploitation of approach curves, has been validated on sets of calibration samples consisting in square parallel plate capacitors for which theoretical capacitance values were numerically calculated.
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Dates et versions

hal-01093500 , version 1 (10-12-2014)

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Ivan Estevez, Pascal Chrétien, Olivier Schneegans, Frédéric Houzé. Specific methodology for capacitance imaging by atomic force microscopy: A breakthrough towards an elimination of parasitic effects. Applied Physics Letters, 2014, 104 (8), pp.083108. ⟨10.1063/1.4866607⟩. ⟨hal-01093500⟩
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