a-Si:H/c-Si heterojunction interface properties from Hall measurements of surface inversion layer - Archive ouverte HAL Access content directly
Conference Papers Year : 2014

a-Si:H/c-Si heterojunction interface properties from Hall measurements of surface inversion layer

Alexander Gudovskikh
  • Function : Author
Laboratoire de génie électrique de Paris
E.V. Nikitina
  • Function : Author
Jean-Paul Kleider
Laboratoire de génie électrique de Paris
CV

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Physics [physics]

Thierry Leblanc  : Connect in order to contact the contributor

https://hal-centralesupelec.archives-ouvertes.fr/hal-01099577

Submitted on : Sunday, January 4, 2015-6:58:18 PM

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hal-01099577 , version 1 (04-01-2015)

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  • HAL Id : hal-01099577 , version 1

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Alexander Gudovskikh, E.V. Nikitina, Jean-Paul Kleider. a-Si:H/c-Si heterojunction interface properties from Hall measurements of surface inversion layer. E-MRS Spring Meeting 2014, European Materials Research Society, May 2014, Lille, France. ⟨hal-01099577⟩

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SUPELEC UPMC EC-PARIS CNRS SUP_LGEP SUP_SCM CENTRALESUPELEC GEEPS PHEMADIC UNIV-PARIS-SACLAY SORBONNE-UNIVERSITE SU-SCIENCES
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