Temperature and bias dependence of hydrogenated amorphous silicon – crystalline silicon heterojunction capacitance: the link to band bending and band offsets

O. Maslova (1) , A. Brézard-Oudot (1) , M.E. Gueunier-Farret (1) , J. Alvarez (1) , W. Favre (1) , D. Muñoz (2) , A.S. Gudovskikh (1) , J.-P. Kleider (1)

1 LGEP - Laboratoire de génie électrique de Paris
2 Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Domaines: Physique [physics]

O. Maslova, A. Brézard-Oudot, M.E. Gueunier-Farret, J. Alvarez, W. Favre, et al.. Temperature and bias dependence of hydrogenated amorphous silicon – crystalline silicon heterojunction capacitance: the link to band bending and band offsets. Canadian Journal of Physics, 2014, 92 (7/8), pp.690-695. ⟨10.1139/cjp-2013-0544⟩. ⟨hal-01099596⟩