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Experimental Demonstration of <i>g<sub>m</sub></i>/I<i><sub>D</sub></i> Based Noise Analysis

Abstract : Recent studies using BSIM3 models have suggested that noise depends on the transconductance-to-drain ratio gm/ID of a transistor. However, to the best of our knowledge, no experimental result demonstrating gm/ID dependent noise previously observed in simulation is available in the literature. This paper examines the underlying principles that make it possible to analyze noise using gm/ID based noise analysis. Qualitative discussion of normalized noise is presented along with experimental results from a 130 nm CMOS process. A close examination of the experimental results reveals that the device noise is width independent from 1 Hz to 10 kHz. Moreover, noise increases as gm/ID is reduced. The experiment observation that noise is width independent makes it possible for circuit designers to generate normalized parameters that are used to study noise intuitively and accurately.
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Contributor : Pietro Maris Ferreira <>
Submitted on : Thursday, October 29, 2015 - 11:41:47 AM
Last modification on : Monday, March 2, 2020 - 1:38:07 PM

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Jack Ou, Pietro M. Ferreira, Jui-Chu Lee. Experimental Demonstration of <i>g<sub>m</sub></i>/I<i><sub>D</sub></i> Based Noise Analysis. Circuits and Systems, 2014, 05 (04), ⟨10.4236/cs.2014.54009⟩. ⟨hal-01222130⟩



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