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Characterization of a-Si:H/c-Si heterojunction by temperature dependent modulated photoluminescence

Ming Xu 1 Mohamed Boutchich 1 Igor Paul Sobkowicz 2, 3 J Alvarez 1 Rudolf Brüggemann 1 Pere Roca I. Cabarrocas 3 Jean-Paul Kleider 1 
1 GeePs - Laboratoire Génie électrique et électronique de Paris
2 Total New Energies
3 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01239190
Contributor : Jean-Paul KLEIDER Connect in order to contact the contributor
Submitted on : Monday, December 7, 2015 - 3:03:06 PM
Last modification on : Sunday, June 26, 2022 - 5:16:47 AM

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  • HAL Id : hal-01239190, version 1

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Citation

Ming Xu, Mohamed Boutchich, Igor Paul Sobkowicz, J Alvarez, Rudolf Brüggemann, et al.. Characterization of a-Si:H/c-Si heterojunction by temperature dependent modulated photoluminescence. 26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany. ⟨hal-01239190⟩

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