Characterization of a-Si:H/c-Si heterojunction by temperature dependent modulated photoluminescence

Ming Xu (1) , Mohamed Boutchich (1) , Igor Paul Sobkowicz (2, 3) , J Alvarez (1) , Rudolf Brüggemann (1) , Pere Roca I. Cabarrocas (3) , Jean-Paul Kleider (1)

1 GeePs - Laboratoire Génie électrique et électronique de Paris
2 Total New Energies
3 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]

Domains: Materials Science [cond-mat.mtrl-sci]; Micro and nanotechnologies/Microelectronics; Electric power; Optics / Photonic; Materials

Ming Xu, Mohamed Boutchich, Igor Paul Sobkowicz, J Alvarez, Rudolf Brüggemann, et al.. Characterization of a-Si:H/c-Si heterojunction by temperature dependent modulated photoluminescence. 26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany. ⟨hal-01239190⟩