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Impact of bulk defects in hydrogenated amorphous Si layers on performance of high efficiency HeteroJunctions solar cells assessed by 2D modeling

Abstract : This paper proposes to address how a-Si:H(p) bulk defects impact the macroscopic electrical characteristics of state-of-the-art HeteroJunction (HJ) solar cells. Thanks to 2D TCAD modeling we can give variation ranges for doping dependent defects concentrations for which solar cell performances are maximum. Besides, for low doping levels (ie. low experimental defects values), it is the adjacent ITO contact which governs the front side HJ electrostatics and thus the solar cell performance.
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01240483
Contributor : Raphaël Lachaume <>
Submitted on : Wednesday, December 9, 2015 - 11:48:53 AM
Last modification on : Friday, November 6, 2020 - 3:28:10 AM

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Raphaël Lachaume, Jean Coignus, Xavier Garros, Pascal Scheiblin, Delfina Munoz, et al.. Impact of bulk defects in hydrogenated amorphous Si layers on performance of high efficiency HeteroJunctions solar cells assessed by 2D modeling. 2012 13th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2012, Grenoble, France. pp.97-100, 2012, ⟨10.1109/ULIS.2012.6193366⟩. ⟨hal-01240483⟩

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