Skip to Main content Skip to Navigation
Journal articles

Influence of the transparent conductive oxide layer deposition step on electrical properties of silicon heterojunction solar cells

Abstract : This work deals with the understanding of the transport behavior of different deposited Indium Tin Oxide (ITO) layers on the emitter of n-type heterojunction solar cells. A complete study based on effective lifetime measurements has been carried out on samples with different ITO thicknesses to evaluate the passivation quality before and after ITO deposition, showing that increasing the ITO thickness degrades the passivation properties only at low injection level. Further characterizations coupled with numerical simulations demonstrate that such a behavior is due to recombination at the ITO/(p) a-Si:H interface induced by the ITO layer.
Complete list of metadatas

https://hal-centralesupelec.archives-ouvertes.fr/hal-01240492
Contributor : Raphaël Lachaume <>
Submitted on : Wednesday, December 9, 2015 - 11:57:01 AM
Last modification on : Thursday, June 11, 2020 - 5:04:06 PM

Identifiers

Collections

Citation

W. Favre, J. Coignus, N. Nguyen, Raphaël Lachaume, R. Cabal, et al.. Influence of the transparent conductive oxide layer deposition step on electrical properties of silicon heterojunction solar cells. Applied Physics Letters, American Institute of Physics, 2013, 102 (18), ⟨10.1063/1.4804985⟩. ⟨hal-01240492⟩

Share

Metrics

Record views

179