Influence of the transparent conductive oxide layer deposition step on electrical properties of silicon heterojunction solar cells

W. Favre 1 J. Coignus 1 N. Nguyen 1 Raphaël Lachaume 2 R. Cabal 1 Delfina Munoz 1
1 DTS - Département des Technologies Solaires
LITEN - Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux : DRT/LITEN
Abstract : This work deals with the understanding of the transport behavior of different deposited Indium Tin Oxide (ITO) layers on the emitter of n-type heterojunction solar cells. A complete study based on effective lifetime measurements has been carried out on samples with different ITO thicknesses to evaluate the passivation quality before and after ITO deposition, showing that increasing the ITO thickness degrades the passivation properties only at low injection level. Further characterizations coupled with numerical simulations demonstrate that such a behavior is due to recombination at the ITO/(p) a-Si:H interface induced by the ITO layer.
Type de document :
Article dans une revue
Applied Physics Letters, American Institute of Physics, 2013, 102 (18), 〈10.1063/1.4804985〉
Liste complète des métadonnées

https://hal-centralesupelec.archives-ouvertes.fr/hal-01240492
Contributeur : Raphaël Lachaume <>
Soumis le : mercredi 9 décembre 2015 - 11:57:01
Dernière modification le : jeudi 11 janvier 2018 - 06:21:41

Identifiants

Collections

Citation

W. Favre, J. Coignus, N. Nguyen, Raphaël Lachaume, R. Cabal, et al.. Influence of the transparent conductive oxide layer deposition step on electrical properties of silicon heterojunction solar cells. Applied Physics Letters, American Institute of Physics, 2013, 102 (18), 〈10.1063/1.4804985〉. 〈hal-01240492〉

Partager

Métriques

Consultations de la notice

29