First investigation of quantum effects in heterojunction solar cells

Abstract : This paper focuses on the impact of quantum effects in a-Si:H / c-Si heterojunction solar cells simulation. A simulation flow is presented, in which a self-consistent Poisson-Schrödinger approach is coupled with classical physics simulations. It is shown that quantum effects have a significant impact on the calculated charge description at front a-Si:H / c-Si interface and appear mandatory for accurate a-Si:H parameters extraction and confident heterojunction solar cell simulation results.
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Direction d'ouvrage, Proceedings, Dossier
2011 11th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Sep 2011, Rome, Italy. pp.23-24, 2011, 978-1-61284-878-5 〈10.1109/NUSOD.2011.6041117〉
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01240551
Contributeur : Raphaël Lachaume <>
Soumis le : mercredi 9 décembre 2015 - 12:08:42
Dernière modification le : lundi 24 septembre 2018 - 10:56:04

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J. Coignus, J. Singer, M. Baudrit, Raphaël Lachaume, Xavier Garros, et al.. First investigation of quantum effects in heterojunction solar cells. 2011 11th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Sep 2011, Rome, Italy. pp.23-24, 2011, 978-1-61284-878-5 〈10.1109/NUSOD.2011.6041117〉. 〈hal-01240551〉

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