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Key issues for accurate simulation of a-Si:H / c-Si heterojunction solar cells

Abstract : Accurate simulation of a-Si:H / c-Si heterojunction (HET) solar cells is mandatory for acquiring a deeper understanding of device physics, better knowledge of material properties, and thus improving solar cells efficiency towards the 26% theoretical limit. The purpose of this paper is to provide relevant guidelines and to highlight key issues for accurate and physically-based HET solar cells simulation. The need for a 2D simulation approach is demonstrated, together with an accurate description of the device optical performance. For the first time, a unified set of models and material parameters is proposed for reproducing experimental IV characteristics under illumination and obscurity conditions, considering state-of-the-art material parameters and localized defects. Finally, the key role of solar cell simulation is demonstrated for further device optimization.
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01240731
Contributor : Raphaël Lachaume <>
Submitted on : Monday, December 14, 2015 - 10:28:54 AM
Last modification on : Thursday, June 11, 2020 - 5:04:06 PM

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J Coignus, M Baudrit, J Singer, Raphaël Lachaume, D Muñoz, et al.. Key issues for accurate simulation of a-Si:H / c-Si heterojunction solar cells. Energy Procedia, Elsevier, 2011, 8, pp.174-179. ⟨10.1016/j.egypro.2011.06.120⟩. ⟨hal-01240731⟩

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