M. A. Green, « Silicon wafer-based tandem cells: The ultimate photovoltaic solution?, Proc. SPIE 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, p.89810, 2014.

K. Derendorf, S. Essig, E. Oliva, V. Klinger, T. Roesener et al., Fabrication of GaInP/GaAs//Si Solar Cells by Surface Activated Direct Wafer Bonding, Fabrication of GaInPSi Solar Cells by Surface Activated Direct Wafer Bonding, p.1423, 2013.
DOI : 10.1109/JPHOTOV.2013.2273097

F. Dimroth, T. Roesener, S. Essig, C. Weuffen, A. Wekkeli et al., Comparison of Direct Growth and Wafer Bonding for the Fabrication of GaInP/GaAs Dual-Junction Solar Cells on Silicon, Comparison of Direct Growth and Wafer Bonding for the Fabrication of GaInP/GaAs Dual-Junction Solar Cells on Silicon, p.620, 2014.
DOI : 10.1109/JPHOTOV.2014.2299406

R. Cariou, J. Maurice, and J. , Decobert and P. Roca i Cabarrocas, « Direct epitaxial growth of silicon on GaAs by low temperature epitaxy, IEEE 40th Photovoltaic Specialist Conference (PVSC), pp.2789-2791, 2014.

R. Cariou, W. Chen, G. Hamon, M. Foldyna, R. Lachaume et al., Kleider and P. Roca i Cabarrocas, « Low temperature plasma epitaxy of Silicon on III-V for tandem solar cells, EMRS Spring Meeting Symposium C, 2015.

I. Mathews, D. O-'mahony, B. Corbett, and A. P. Morrison, Theoretical performance of multi-junction solar cells combining III-V and Si materials, Optics Express, vol.20, issue.S5, pp.754-764, 2012.
DOI : 10.1364/OE.20.00A754

M. Baudrit and C. Algora, « Theoretical optimization of GaInP/GaAs dual-junction solar cell: Toward a 36% efficiency at 1000 suns. », physica status solidi (a), pp.474-478, 2010.

R. Cariou, J. Tang, N. Ramay, R. Ruggeri, and P. , Roca i Cabarrocas, « Low temperature epitaxial growth of SiGe absorber for thin film heterojunction solar cells, », Solar Energy Materials and Solar Cells, vol.134, 2015.

S. Heckelmann, D. Lackner, C. Karcher, F. Dimroth, and A. W. Bett, Investigations on Al<inline-formula><tex-math>$_{\bm x}$</tex-math></inline-formula>Ga<inline-formula> <tex-math>$_{\bm {1-x}}$</tex-math></inline-formula>As Solar Cells Grown by MOVPE, Investigations on Al Ga As Solar Cells Grown by MOVPE, pp.446-453, 2015.
DOI : 10.1109/JPHOTOV.2014.2367869

S. Chakraborty, R. Cariou, M. Labrune, and P. , Feasibility of using thin crystalline silicon films epitaxially grown at 165 ??C in solar cells: A computer simulation study, EPJ Photovoltaics, vol.4, p.45103, 2013.
DOI : 10.1051/epjpv/2013014