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Oxidation in air of nitride bonded silicon carbide ceramic

Abstract : The rate of air oxidation towards 1,000degreesC of the Si3N4-bonded silicon carbide refractory is low. It is found that the porous nitride-bonding phase oxidizes mainly and that the SiC oxidation is negligible. The decrease of specific surface area, due to the growing of a dense silica layer, induces much slower kinetics.
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Submitted on : Tuesday, January 5, 2016 - 4:02:39 PM
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A. Zymla, V. Zymla, T. Pawlik, M. Sopicka-Lizer, J.-B. Guillot. Oxidation in air of nitride bonded silicon carbide ceramic. Revue de Métallurgie, EDP Sciences, 2004, 101 (5), pp.427-429. ⟨10.1051/metal:2004164⟩. ⟨hal-01251094⟩

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