Oxidation in air of nitride bonded silicon carbide ceramic

A. Zymla (1) , V. Zymla (1) , T. Pawlik (2) , M. Sopicka-Lizer (2) , J.-B. Guillot (1)

1 LGPM - Laboratoire de Génie des Procédés et Matériaux - EA 4038
2 Politech Slaska

The rate of air oxidation towards 1,000degreesC of the Si3N4-bonded silicon carbide refractory is low. It is found that the porous nitride-bonding phase oxidizes mainly and that the SiC oxidation is negligible. The decrease of specific surface area, due to the growing of a dense silica layer, induces much slower kinetics.

Mots clés: HIGH-TEMPERATURE OXIDATION; SI3N4-BONDED SIC CERAMICS; MECHANISM; STEAM; CO2; COMPOSITE; BEHAVIOR; KINETICS; SI3N4

Domaines: Chimie

A. Zymla, V. Zymla, T. Pawlik, M. Sopicka-Lizer, J.-B. Guillot. Oxidation in air of nitride bonded silicon carbide ceramic. Revue de Métallurgie, 2004, 101 (5), pp.427-429. ⟨10.1051/metal:2004164⟩. ⟨hal-01251094⟩