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Poster communications

Deep-level transient spectroscopy (DLTS) TCAD-based simulation

Arouna Darga 1 Djicknoum Diouf 2 Artem Baranov Jean-Paul Kleider 1 
1 GeePs - Laboratoire Génie électrique et électronique de Paris
2 LGEP - Laboratoire de génie électrique de Paris
Abstract : Optimization of solar cells device and materials require a set of tools for the control and engineering of traps states which can be introduced during the fabrication process. Deep Level Transient Spectroscopy (DLTS) technique seems to be the most sensitive measuring method to determine electronic properties of deep levels in semiconductors. We use modern device TCAD (Technology Computer Aided Design) simulation software to evaluate the DLTS technique. The simulated device is a silicon schottky diode.
Keywords : Traps states spectroscopy DLTS TCAD Photovoltaic
Document type :
Poster communications
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01253399
Contributor : Arouna DARGA Connect in order to contact the contributor
Submitted on : Sunday, January 10, 2016 - 11:27:57 AM
Last modification on : Sunday, June 26, 2022 - 5:22:00 AM

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  • HAL Id : hal-01253399, version 1

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UPMC | CNRS | CENTRALESUPELEC | GEEPS | PHEMADIC | UNIV-PARIS-SACLAY | SORBONNE-UNIVERSITE | SU-SCIENCES | GS-ENGINEERING | INSTITUT-SCIENCES-LUMIERE

Citation

Arouna Darga, Djicknoum Diouf, Artem Baranov, Jean-Paul Kleider. Deep-level transient spectroscopy (DLTS) TCAD-based simulation. Journées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France. ⟨hal-01253399⟩

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