Abstract : Optimization of solar cells device and materials require a set of tools for the control and engineering of traps states which can be introduced during the fabrication process. Deep Level Transient Spectroscopy (DLTS) technique seems to be the most sensitive measuring method to determine electronic properties of deep levels in semiconductors. We use modern device TCAD (Technology Computer Aided Design)
simulation software to evaluate the DLTS technique. The simulated device is a silicon schottky diode.
https://hal-centralesupelec.archives-ouvertes.fr/hal-01253399 Contributor : Arouna DargaConnect in order to contact the contributor Submitted on : Sunday, January 10, 2016 - 11:27:57 AM Last modification on : Wednesday, September 8, 2021 - 6:07:26 PM