Deep-level transient spectroscopy (DLTS) TCAD-based simulation

Arouna Darga (1) , Djicknoum Diouf (2) , Artem Baranov , Jean-Paul Kleider (1)

1 GeePs - Laboratoire Génie électrique et électronique de Paris
2 LGEP - Laboratoire de génie électrique de Paris

Optimization of solar cells device and materials require a set of tools for the control and engineering of traps states which can be introduced during the fabrication process. Deep Level Transient Spectroscopy (DLTS) technique seems to be the most sensitive measuring method to determine electronic properties of deep levels in semiconductors. We use modern device TCAD (Technology Computer Aided Design) simulation software to evaluate the DLTS technique. The simulated device is a silicon schottky diode.

Keywords: Traps states spectroscopy; DLTS; TCAD; Photovoltaic

Domains: Materials Science [cond-mat.mtrl-sci]; Physics [physics]; Micro and nanotechnologies/Microelectronics

Arouna Darga, Djicknoum Diouf, Artem Baranov, Jean-Paul Kleider. Deep-level transient spectroscopy (DLTS) TCAD-based simulation. Journées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France. . ⟨hal-01253399⟩