A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering

Kuan-I Ho 1 Mohamed Boutchich 2, 3 Ching-Yuan Su 4 Rosalia Moreddu 5 Eugene Sebastian Raj Marianathan 6 Laurent Montes 7 Chao-Sung Lai 1
1 Chang Gung University
2 UPMC - Université Pierre et Marie Curie - Paris 6
3 GeePs - Laboratoire Génie électrique et électronique de Paris
4 National Central University, Jhongli Dist., Taoyuan 32001, Taiwan
5 Department of Electronic Engineering Polytechnic of Turin
6 UGA - Université Grenoble Alpes
7 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
Abstract : The conduction channel of a graphene field‐effect transistor (FET) is decoupled from the parasitic charge impurities of the underlying substrate. Fluorographene as a passivation layer is fabricated between the oxide substrate and channel, and a self‐aligned gate‐terminated FET is also fabricated. This approach significantly reduces the scattering and, as a result, the mobility increases ten fold.
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Submitted on : Monday, January 18, 2016 - 11:02:17 AM
Last modification on : Friday, March 22, 2019 - 1:41:55 AM

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CENTRALESUPELEC | GEEPS | PHEMADIC | UPMC | IMEP-LAHC | UNIV-SAVOIE | UGA | UNIV-PARIS-SACLAY | SORBONNE-UNIVERSITE | CMNE | SU-SCIENCES

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Kuan-I Ho, Mohamed Boutchich, Ching-Yuan Su, Rosalia Moreddu, Eugene Sebastian Raj Marianathan, et al.. A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering. Advanced Materials, Wiley-VCH Verlag, 2015, 27 (41), pp.6519-6525. 〈10.1002/adma.201502544〉. 〈hal-01257741〉

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