A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering

Abstract : The conduction channel of a graphene field‐effect transistor (FET) is decoupled from the parasitic charge impurities of the underlying substrate. Fluorographene as a passivation layer is fabricated between the oxide substrate and channel, and a self‐aligned gate‐terminated FET is also fabricated. This approach significantly reduces the scattering and, as a result, the mobility increases ten fold.
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Submitted on : Monday, January 18, 2016 - 11:02:17 AM
Last modification on : Friday, March 22, 2019 - 1:41:55 AM

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Kuan-I Ho, Mohamed Boutchich, Ching-Yuan Su, Rosalia Moreddu, Eugene Sebastian Raj Marianathan, et al.. A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering. Advanced Materials, Wiley-VCH Verlag, 2015, 27 (41), pp.6519-6525. 〈10.1002/adma.201502544〉. 〈hal-01257741〉

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