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Journal articles
A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering
Kuan-I Ho
1
Mohamed Boutchich
2, 3
Ching-Yuan Su
4
Rosalia Moreddu
5
Eugene Sebastian Raj Marianathan
6
Laurent Montes
7
Chao-Sung Lai
1
Kuan-I Ho 1
Author
Mohamed Boutchich 2, 3
Author IdHAL : mohamed-boutchich
Ching-Yuan Su 4
Author
Rosalia Moreddu 5
Author
1
Chang Gung University (France)
2
UPMC - Université Pierre et Marie Curie - Paris 6 (4 place Jussieu - 75005 Paris - France)
3
GeePs - Laboratoire Génie électrique et électronique de Paris (11, rue Joliot Curie
Plateau de Moulon
91192 Gif sur Yvette - France)
- CNRS - Centre National de la Recherche Scientifique : UMR8507 (France)
- CentraleSupélec (3, rue Joliot Curie, Plateau de Moulon, 91192 GIF-SUR-YVETTE Cedex - France)
- UPMC - Université Pierre et Marie Curie - Paris 6 (4 place Jussieu - 75005 Paris - France)
- UP11 - Université Paris-Sud - Paris 11 (Bâtiment 300 - 91405 Orsay cedex - France)
6
UGA [2016-2019] - Université Grenoble Alpes [2016-2019] (38058 Grenoble cedex - France)
7
IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (Site Grenoble : Grenoble INP - Minatec : 3, Parvis Louis Néel - CS 50257 - 38016 Grenoble Cedex 1 / Site Chambéry : Université de Savoie - F73376 Le Bourget du Lac Cedex - France)
- UJF - Université Joseph Fourier - Grenoble 1 (BP 53 - 38041 Grenoble Cedex 9 - France)
- Grenoble INP - Institut polytechnique de Grenoble - Grenoble Institute of Technology (46 avenue Félix Viallet 38031 Grenoble Cedex 1 - France)
- INPG - Institut National Polytechnique de Grenoble (46 avenue Félix Viallet 38031 Grenoble Cedex 1 - France)
- USMB [Université de Savoie] [Université de Chambéry] - Université Savoie Mont Blanc (27, rue Marcoz - 73000 Chambéry - France)
- CNRS - Centre National de la Recherche Scientifique : UMR5130 (France)
Abstract : The conduction channel of a graphene field‐effect transistor (FET) is decoupled from the parasitic charge impurities of the underlying substrate. Fluorographene as a passivation layer is fabricated between the oxide substrate and channel, and a self‐aligned gate‐terminated FET is also fabricated. This approach significantly reduces the scattering and, as a result, the mobility increases ten fold.
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Journal articles
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01257741
Contributor : Thierry Leblanc Connect in order to contact the contributor
Submitted on : Monday, January 18, 2016 - 11:02:17 AM
Last modification on : Tuesday, November 16, 2021 - 3:58:51 AM
Contributor : Thierry Leblanc Connect in order to contact the contributor
Submitted on : Monday, January 18, 2016 - 11:02:17 AM
Last modification on : Tuesday, November 16, 2021 - 3:58:51 AM
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- HAL Id : hal-01257741, version 1
- DOI : 10.1002/adma.201502544
Collections
CENTRALESUPELEC | GEEPS | PHEMADIC | CNRS | UPMC | IMEP-LAHC | UNIV-SAVOIE | SORBONNE-UNIVERSITE | SU-SCIENCES | UGA | ANR | GS-ENGINEERING | INSTITUT-SCIENCES-LUMIERE
Citation
Kuan-I Ho, Mohamed Boutchich, Ching-Yuan Su, Rosalia Moreddu, Eugene Sebastian Raj Marianathan, et al.. A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering. Advanced Materials, Wiley-VCH Verlag, 2015, 27 (41), pp.6519-6525. ⟨10.1002/adma.201502544⟩. ⟨hal-01257741⟩
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