A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering

Kuan-I Ho (1) , Mohamed Boutchich (2, 3) , Ching-Yuan Su (4) , Rosalia Moreddu (5) , Eugene Sebastian Raj Marianathan (6) , Laurent Montes (7) , Chao-Sung Lai (1)

1 Chang Gung University
2 UPMC - Université Pierre et Marie Curie - Paris 6
3 GeePs - Laboratoire Génie électrique et électronique de Paris
4 National Central University, Jhongli Dist., Taoyuan 32001, Taiwan
5 Department of Electronic Engineering Polytechnic of Turin
6 UGA [2016-2019] - Université Grenoble Alpes [2016-2019]
7 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

The conduction channel of a graphene field‐effect transistor (FET) is decoupled from the parasitic charge impurities of the underlying substrate. Fluorographene as a passivation layer is fabricated between the oxide substrate and channel, and a self‐aligned gate‐terminated FET is also fabricated. This approach significantly reduces the scattering and, as a result, the mobility increases ten fold.

Domains: Physics [physics]

Kuan-I Ho, Mohamed Boutchich, Ching-Yuan Su, Rosalia Moreddu, Eugene Sebastian Raj Marianathan, et al.. A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering. Advanced Materials, 2015, 27 (41), pp.6519-6525. ⟨10.1002/adma.201502544⟩. ⟨hal-01257741⟩