Effective driving voltage on polarization fatigue in (Pb,La)(Zr,Ti)O3 antiferroelectric thin films

Wenping Geng (1) , Xiaojie Lou (1) , Xu Jianghong (1) , Fuping Zhang (2) , Liu Yang (3) , Brahim Dkhil (3) , Xiaobing Ren (1) , Zhang Ming (1) , Hongliang He (2)

1 Multi-disciplinary Materials Research Center, Frontier Institute of Science and Technology and State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University
2 Laboratory for Shock Wave and Detonation Physics Research [Mianyang]
3 SPMS - Laboratoire Structures, Propriétés et Modélisation des solides

Polarization fatigue in (Pb0.97La0.02)(Zr0.95Ti0.05)O3(PLZT) antiferroelectric thin films deposited onto silicon wafers is studies by investigating the effect of the peak/average/root-mean-square cycling voltage through varying the waveform of the electrical excitation. Intrestingly, it is found that the fatigue behavior of the film is determined by the root-mean-square voltage of the external driving excitation rather than by the peak or average voltages. Our results can be well explained in the framework of the local phase decomposition model and indicate that the root-mean-square voltage should be considered as the effective driving voltage determining the polarization fatigue PLZT antiferroelectric films.

Domains: Materials Science [cond-mat.mtrl-sci]

Wenping Geng, Xiaojie Lou, Xu Jianghong, Fuping Zhang, Liu Yang, et al.. Effective driving voltage on polarization fatigue in (Pb,La)(Zr,Ti)O3 antiferroelectric thin films. Ceramics International, 2015, 41 (Issue 1, Part A), pp.109-114. ⟨10.1016/j.ceramint.2014.08.041⟩. ⟨hal-01262843⟩