Effective driving voltage on polarization fatigue in (Pb,La)(Zr,Ti)O3 antiferroelectric thin films - Archive ouverte HAL Access content directly
Journal Articles Ceramics International Year : 2015

Effective driving voltage on polarization fatigue in (Pb,La)(Zr,Ti)O3 antiferroelectric thin films

(1) , (1) , (1) , (2) , (3) , (3) , (1) , (1) , (2)
1
2
3

Abstract

Polarization fatigue in (Pb0.97La0.02)(Zr0.95Ti0.05)O3(PLZT) antiferroelectric thin films deposited onto silicon wafers is studies by investigating the effect of the peak/average/root-mean-square cycling voltage through varying the waveform of the electrical excitation. Intrestingly, it is found that the fatigue behavior of the film is determined by the root-mean-square voltage of the external driving excitation rather than by the peak or average voltages. Our results can be well explained in the framework of the local phase decomposition model and indicate that the root-mean-square voltage should be considered as the effective driving voltage determining the polarization fatigue PLZT antiferroelectric films.
Not file

Dates and versions

hal-01262843 , version 1 (27-01-2016)

Identifiers

Cite

Wenping Geng, Xiaojie Lou, Xu Jianghong, Fuping Zhang, Liu Yang, et al.. Effective driving voltage on polarization fatigue in (Pb,La)(Zr,Ti)O3 antiferroelectric thin films. Ceramics International, 2015, 41 (Issue 1, Part A), pp.109-114. ⟨10.1016/j.ceramint.2014.08.041⟩. ⟨hal-01262843⟩
59 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More