Electrical properties of hydrogenated microcrystalline silicon carbon alloys: effect of deposition parameters and light soaking - Archive ouverte HAL

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Journal Articles Journal of Physics D: Applied Physics Year : 2015

Electrical properties of hydrogenated microcrystalline silicon carbon alloys: effect of deposition parameters and light soaking

(1, 2) , (2) , (2) , (1)

1
2

Sofia Gaiaschi

Function : Author

Istituto per la Microelettronica e Microsistemi [Catania]

Laboratoire Génie électrique et électronique de Paris

Marie-Estelle Farret-Gueunier

Function : Author
PersonId : 14061
IdHAL : marie-gueunier-farret
ORCID : 0000-0003-1615-498X
IdRef : 166935093

Laboratoire Génie électrique et électronique de Paris

Christophe Longeaud

Function : Author
PersonId : 6409
IdHAL : christophe-longeaud
IdRef : 076747425

Laboratoire Génie électrique et électronique de Paris

Eric Johnson

Function : Author
PersonId : 776958
ORCID : 0000-0002-8870-1949

Istituto per la Microelettronica e Microsistemi [Catania]

Domains

Physics [physics]

christophe longeaud : Connect in order to contact the contributor

https://hal-centralesupelec.archives-ouvertes.fr/hal-01274543

Submitted on : Tuesday, February 16, 2016-8:00:28 AM

Last modification on : Monday, October 17, 2022-1:26:36 PM

Dates and versions

hal-01274543 , version 1 (16-02-2016)

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HAL Id : hal-01274543 , version 1
DOI : 10.1088/0022-3727/48/28/285101

Cite

Sofia Gaiaschi, Marie-Estelle Farret-Gueunier, Christophe Longeaud, Eric Johnson. Electrical properties of hydrogenated microcrystalline silicon carbon alloys: effect of deposition parameters and light soaking. Journal of Physics D: Applied Physics, 2015, 48, pp.285101. ⟨10.1088/0022-3727/48/28/285101⟩. ⟨hal-01274543⟩

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