New linewidth enhancement determination method in semiconductor lasers based on spectrum analysis above and below threshold

Abstract : Linewidth measurements of singlemode and multimode InGaAsP lasers were made above and below threshold with adapted interferometers. Linewidth against inverse power plots, Δv = f(1/P), show different Schawlow–Townes slopes above and below threshold. Differences have been observed depending on singlemode or multimode laser behaviour. In the singlemode case the linewidth enhancement factor has been determined (α = 2.6) by extrapolating and correlating results above and below threshold.
Type de document :
Article dans une revue
Electronics Letters, IET, 1992
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01275170
Contributeur : Zeno Toffano <>
Soumis le : mardi 16 février 2016 - 22:44:11
Dernière modification le : mercredi 29 novembre 2017 - 15:29:01

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  • HAL Id : hal-01275170, version 1

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Zeno Toffano, Alain Destrez, C. Birocheau, Lotfi Hassine. New linewidth enhancement determination method in semiconductor lasers based on spectrum analysis above and below threshold. Electronics Letters, IET, 1992. 〈hal-01275170〉

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