Skip to Main content Skip to Navigation
Journal articles

New linewidth enhancement determination method in semiconductor lasers based on spectrum analysis above and below threshold

Abstract : Linewidth measurements of singlemode and multimode InGaAsP lasers were made above and below threshold with adapted interferometers. Linewidth against inverse power plots, Δv = f(1/P), show different Schawlow–Townes slopes above and below threshold. Differences have been observed depending on singlemode or multimode laser behaviour. In the singlemode case the linewidth enhancement factor has been determined (α = 2.6) by extrapolating and correlating results above and below threshold.
Document type :
Journal articles
Complete list of metadatas

https://hal-centralesupelec.archives-ouvertes.fr/hal-01275170
Contributor : Zeno Toffano <>
Submitted on : Tuesday, February 16, 2016 - 10:44:11 PM
Last modification on : Monday, September 9, 2019 - 2:50:04 PM

Identifiers

Collections

Citation

Zeno Toffano, Alain Destrez, C. Birocheau, Lotfi Hassine. New linewidth enhancement determination method in semiconductor lasers based on spectrum analysis above and below threshold. Electronics Letters, IET, 1992, 28 (1), ⟨10.1049/el:19920006⟩. ⟨hal-01275170⟩

Share

Metrics

Record views

225