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Large effects of pressure induced inelastic channels on interface thermal conductance

Abstract : A large effect of pressure on the thermal conductance of silicon/carbon nanotube junctions is shown to result from induced anharmonicity at the interface. Through atomistic simulations, we demonstrate the opening of pressure induced inelastic phonon channels, which are responsible for a several fold increase of the thermal conductance.
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01285849
Contributor : Sebastian Volz <>
Submitted on : Wednesday, March 9, 2016 - 6:39:31 PM
Last modification on : Friday, July 3, 2020 - 9:28:03 AM

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Yann Chalopin, Natalio Mingo, Jiankuai Diao, Deepak Srivastava, Sebastian Volz. Large effects of pressure induced inelastic channels on interface thermal conductance. Applied Physics Letters, American Institute of Physics, 2012, 101 (22), pp.221903. ⟨10.1063/1.4766266⟩. ⟨hal-01285849⟩

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