Effect of the AlN interfacial layer on the piezoelectric properties of GaN nanowires

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Poster communications
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01338879
Contributor : Frédéric Houzé <>
Submitted on : Wednesday, June 29, 2016 - 12:16:10 PM
Last modification on : Thursday, March 21, 2019 - 2:16:32 PM

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  • HAL Id : hal-01338879, version 1

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Nicolas Jamond, Pascal Chrétien, L Largeau, Olivia Mauguin, Elisabeth Galopin, et al.. Effect of the AlN interfacial layer on the piezoelectric properties of GaN nanowires. Réunion plénière des GDR PULSE (Processus ULtimes en épitaxie de SEmiconducteurs) et NNS (NanoFils, Nanotubes, Semiconducteurs), Oct 2014, Toulouse, France. ⟨hal-01338879⟩

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