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Atomic layer deposition of gallium phosphide for silicon based photovoltaics

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Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci] Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics Engineering Sciences [physics] Electric power Engineering Sciences [physics] Optics / Photonic Engineering Sciences [physics] Materials

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Submitted on : Sunday, September 11, 2016-10:23:43 AM

Last modification on : Thursday, March 9, 2023-10:30:17 AM

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hal-01363690 , version 1 (11-09-2016)

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  • HAL Id : hal-01363690 , version 1

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A.S. Gudovskikh, I.A. Morozov, D. A. Kudryashov, E.V. Nikitina, A. S. Bukatin, et al.. Atomic layer deposition of gallium phosphide for silicon based photovoltaics. Photovoltaic Technical Conference, PVTC 2016, May 2016, Marseille, France. ⟨hal-01363690⟩

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