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Poster communications

Direct growth of crystalline Silicon on GaAs by Low Temperature PECVD: toward hybrid tunnel junctions for III-V/Si tandem cells

Gwenaëlle Hamon 1, 2 Jean Decobert 3 N. Vaissiere 1 Raphaël Lachaume 4 Romain Cariou 3, 1 Wanghua Chen 1 José Alvarez 4 Nada Habka 2 Jean-Paul Kleider 4 Pere Roca I. Cabarrocas 1 
1 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
2 Total New Energies
3 III-V Lab - Alcatel-Thalès III-V lab
4 GeePs - Laboratoire Génie électrique et électronique de Paris
Document type :
Poster communications
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01363728
Contributor : Jean-Paul KLEIDER Connect in order to contact the contributor
Submitted on : Sunday, September 11, 2016 - 2:58:36 PM
Last modification on : Saturday, June 25, 2022 - 10:21:43 PM

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  • HAL Id : hal-01363728, version 1

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Citation

Gwenaëlle Hamon, Jean Decobert, N. Vaissiere, Raphaël Lachaume, Romain Cariou, et al.. Direct growth of crystalline Silicon on GaAs by Low Temperature PECVD: toward hybrid tunnel junctions for III-V/Si tandem cells. 43rd IEEE PV Specialists Conference, Jun 2016, Portland, United States. ⟨hal-01363728⟩

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