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https://hal-centralesupelec.archives-ouvertes.fr/hal-01363728
Submitted on : Sunday, September 11, 2016-2:58:36 PM
Last modification on : Saturday, June 25, 2022-10:21:43 PM
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- HAL Id : hal-01363728 , version 1
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Gwenaëlle Hamon, Jean Decobert, N. Vaissiere, Raphaël Lachaume, Romain Cariou, et al.. Direct growth of crystalline Silicon on GaAs by Low Temperature PECVD: toward hybrid tunnel junctions for III-V/Si tandem cells. 43rd IEEE PV Specialists Conference, Jun 2016, Portland, United States. ⟨hal-01363728⟩
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