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Poster communications

Direct growth of crystalline Silicon on GaAs by Low Temperature PECVD: toward hybrid tunnel junctions for III-V/Si tandem cells

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https://hal-centralesupelec.archives-ouvertes.fr/hal-01363728
Contributor : Jean-Paul Kleider Connect in order to contact the contributor
Submitted on : Sunday, September 11, 2016 - 2:58:36 PM
Last modification on : Tuesday, April 5, 2022 - 3:36:58 AM

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  • HAL Id : hal-01363728, version 1

Citation

Gwenaëlle Hamon, Jean Decobert, N. Vaissiere, Raphaël Lachaume, Romain Cariou, et al.. Direct growth of crystalline Silicon on GaAs by Low Temperature PECVD: toward hybrid tunnel junctions for III-V/Si tandem cells. 43rd IEEE PV Specialists Conference, Jun 2016, Portland, United States. ⟨hal-01363728⟩

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