Direct growth of crystalline Silicon on GaAs by Low Temperature PECVD: toward hybrid tunnel junctions for III-V/Si tandem cells - Archive ouverte HAL Access content directly
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Direct growth of crystalline Silicon on GaAs by Low Temperature PECVD: toward hybrid tunnel junctions for III-V/Si tandem cells

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hal-01363728 , version 1 (11-09-2016)

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  • HAL Id : hal-01363728 , version 1

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Gwenaëlle Hamon, Jean Decobert, N. Vaissiere, Raphaël Lachaume, Romain Cariou, et al.. Direct growth of crystalline Silicon on GaAs by Low Temperature PECVD: toward hybrid tunnel junctions for III-V/Si tandem cells. 43rd IEEE PV Specialists Conference, Jun 2016, Portland, United States. ⟨hal-01363728⟩
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