Direct growth of crystalline Silicon on GaAs by Low Temperature PECVD: toward hybrid tunnel junctions for III-V/Si tandem cells

Gwenaëlle Hamon (1, 2) , Jean Decobert (3) , N. Vaissiere (1) , Raphaël Lachaume (4) , Romain Cariou (3, 1) , Wanghua Chen (1) , José Alvarez (4) , Nada Habka (2) , Jean-Paul Kleider (4) , Pere Roca I. Cabarrocas (1)

1 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
2 Total New Energies
3 III-V Lab - Alcatel-Thalès III-V lab
4 GeePs - Laboratoire Génie électrique et électronique de Paris

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]; Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics; Engineering Sciences [physics]; Electric power; Engineering Sciences [physics]; Optics / Photonic; Engineering Sciences [physics]; Materials

Gwenaëlle Hamon, Jean Decobert, N. Vaissiere, Raphaël Lachaume, Romain Cariou, et al.. Direct growth of crystalline Silicon on GaAs by Low Temperature PECVD: toward hybrid tunnel junctions for III-V/Si tandem cells. 43rd IEEE PV Specialists Conference, Jun 2016, Portland, United States. ⟨hal-01363728⟩