Direct growth of crystalline Silicon on GaAs by Low Temperature PECVD: toward hybrid tunnel junctions for III-V/Si tandem cells

Gwenaëlle Hamon; Jean Decobert; N. Vaissiere; Raphaël Lachaume; Romain Cariou; Wanghua Chen; José Alvarez; Nada Habka; Jean-Paul Kleider; Pere Roca I. Cabarrocas

Direct growth of crystalline Silicon on GaAs by Low Temperature PECVD: toward hybrid tunnel junctions for III-V/Si tandem cells

Gwenaëlle Hamon ^{1, 2} Jean Decobert ³ N. Vaissiere ¹ Raphaël Lachaume ⁴ Romain Cariou ^{3, 1} Wanghua Chen ¹ José Alvarez ⁴ Nada Habka ² Jean-Paul Kleider ⁴ Pere Roca I. Cabarrocas ¹

1 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]

2 Total New Energies

3 III-V Lab - Alcatel-Thalès III-V lab

4 GeePs - Laboratoire Génie électrique et électronique de Paris

Document type :

Poster communications

Domain :

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

Engineering Sciences [physics] / Electric power

Engineering Sciences [physics] / Optics / Photonic

Engineering Sciences [physics] / Materials

Liste complète des métadonnées

https://hal-centralesupelec.archives-ouvertes.fr/hal-01363728
Contributor : Jean-Paul Kleider <>
Submitted on : Sunday, September 11, 2016 - 2:58:36 PM
Last modification on : Wednesday, March 27, 2019 - 4:20:04 PM

Direct growth of crystalline Silicon on GaAs by Low Temperature PECVD: toward hybrid tunnel junctions for III-V/Si tandem cells

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Direct growth of crystalline Silicon on GaAs by Low Temperature PECVD: toward hybrid tunnel junctions for III-V/Si tandem cells

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