Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells

Alexander Korovin; J Alvarez; Jean-Paul Kleider

Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells

Alexander Korovin ¹ J Alvarez ¹ Jean-Paul Kleider ¹

1 GeePs - Laboratoire Génie électrique et électronique de Paris

Document type :

Poster communications

Domain :

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

Engineering Sciences [physics] / Electric power

Engineering Sciences [physics] / Optics / Photonic

Engineering Sciences [physics] / Materials

Liste complète des métadonnées

https://hal-centralesupelec.archives-ouvertes.fr/hal-01395733
Contributor : Jean-Paul Kleider <>
Submitted on : Friday, November 11, 2016 - 4:35:11 PM
Last modification on : Thursday, March 21, 2019 - 1:05:00 PM

Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells

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Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells

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