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Poster communications

Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells

Alexander Korovin 1 J Alvarez 1 Jean-Paul Kleider 1 
1 GeePs - Laboratoire Génie électrique et électronique de Paris
Document type :
Poster communications
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01395733
Contributor : Jean-Paul KLEIDER Connect in order to contact the contributor
Submitted on : Friday, November 11, 2016 - 4:35:11 PM
Last modification on : Sunday, June 26, 2022 - 5:25:28 AM

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  • HAL Id : hal-01395733, version 1

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UPMC | CNRS | CENTRALESUPELEC | GEEPS | PHEMADIC | UNIV-PARIS-SACLAY | SORBONNE-UNIVERSITE | SU-SCIENCES | GS-ENGINEERING | INSTITUT-SCIENCES-LUMIERE

Citation

Alexander Korovin, J Alvarez, Jean-Paul Kleider. Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells. SiliconPV 2016, Mar 2016, Chambéry, France. ⟨hal-01395733⟩

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