Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells

Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci] Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics Engineering Sciences [physics] Electric power Engineering Sciences [physics] Optics / Photonic Engineering Sciences [physics] Materials

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Submitted on : Friday, November 11, 2016-4:35:11 PM

Last modification on : Wednesday, February 8, 2023-5:11:00 PM

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hal-01395733 , version 1 (11-11-2016)

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HAL Id : hal-01395733 , version 1

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Alexander Korovin, J Alvarez, Jean-Paul Kleider. Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells. SiliconPV 2016, Mar 2016, Chambéry, France. ⟨hal-01395733⟩

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