Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells - CentraleSupélec

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Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells

(1) , (1) , (1)

1

Alexander Korovin

Function : Author
PersonId : 5988
IdHAL : alexander-v-korovin
IdRef : 253127815

Laboratoire Génie électrique et électronique de Paris

J Alvarez

Function : Author
PersonId : 5252
IdHAL : jose-alvarez
ORCID : 0000-0003-3558-8302
IdRef : 089018222

Laboratoire Génie électrique et électronique de Paris

Jean-Paul Kleider

Function : Author
PersonId : 5984
IdHAL : jean-paul-kleider
ORCID : 0000-0003-4388-6326
IdRef : 03273039X

Laboratoire Génie électrique et électronique de Paris

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Materials Science [cond-mat.mtrl-sci] Micro and nanotechnologies/Microelectronics Electric power Optics / Photonic Materials

Jean-Paul KLEIDER : Connect in order to contact the contributor

https://hal-centralesupelec.archives-ouvertes.fr/hal-01395733

Submitted on : Friday, November 11, 2016-4:35:11 PM

Last modification on : Friday, March 24, 2023-2:53:03 PM

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hal-01395733 , version 1 (11-11-2016)

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HAL Id : hal-01395733 , version 1

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Alexander Korovin, J Alvarez, Jean-Paul Kleider. Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells. SiliconPV 2016, Mar 2016, Chambéry, France. ⟨hal-01395733⟩

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