Experimental Demonstration of gm/ID Based Noise Analysis

Abstract : Recent studies using BSIM3 models have suggested that noise depends on the transconductance- to-drain ratio (gmID) of a transistor. However, to the best of our knowledge, no experimental gmID result demonstrating gmID dependent noise previously observed in simulation is available in the literature. This paper examines the underlying principles that make it possible to analyze noise using gmID based noise analysis. Qualitative discussion of normalized noise is presented along with experimental results from a 130 nm CMOS process. A close examination of the experimental results reveals that the device noise is width independent from 1 Hz to 10 kHz. Moreover, noise increases as gmID is reduced. The experiment observation that noise is width independent makes it possible for circuit designers to generate normalized parameters that are used to study noise intuitively and accurately.
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Article dans une revue
Circuits and Systems, 2014, 5 (4), pp.69-75
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01417119
Contributeur : Pietro Maris Ferreira <>
Soumis le : jeudi 15 décembre 2016 - 12:13:23
Dernière modification le : jeudi 11 janvier 2018 - 06:19:15

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  • HAL Id : hal-01417119, version 1

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Pietro Maris Ferreira, Jack Ou. Experimental Demonstration of gm/ID Based Noise Analysis. Circuits and Systems, 2014, 5 (4), pp.69-75. 〈hal-01417119〉

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