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Journal Articles Microelectronic Engineering Year : 2016

An ultra-thin SiO2 ALD layer for void-free bonding of III–V material on silicon

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hal-01449032 , version 1 (30-01-2017)

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A. Talneau, K. Pantzas, A. Durnez, G. Patriarche, D. Alamarguy, et al.. An ultra-thin SiO2 ALD layer for void-free bonding of III–V material on silicon. Microelectronic Engineering, 2016, 162, pp.40 - 44. ⟨10.1016/j.mee.2016.05.001⟩. ⟨hal-01449032⟩
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