Journal Articles
Microelectronic Engineering
Year : 2016
David Alamarguy : Connect in order to contact the contributor
https://hal-centralesupelec.archives-ouvertes.fr/hal-01449032
Submitted on : Monday, January 30, 2017-1:48:03 AM
Last modification on : Friday, March 24, 2023-2:53:03 PM
Cite
A. Talneau, K. Pantzas, A. Durnez, G. Patriarche, D. Alamarguy, et al.. An ultra-thin SiO2 ALD layer for void-free bonding of III–V material on silicon. Microelectronic Engineering, 2016, 162, pp.40 - 44. ⟨10.1016/j.mee.2016.05.001⟩. ⟨hal-01449032⟩
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