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An ultra-thin SiO2 ALD layer for void-free bonding of III–V material on silicon

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https://hal-centralesupelec.archives-ouvertes.fr/hal-01449032
Contributor : David Alamarguy <>
Submitted on : Monday, January 30, 2017 - 1:48:03 AM
Last modification on : Tuesday, July 20, 2021 - 3:04:17 AM

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A. Talneau, K. Pantzas, A. Durnez, G. Patriarche, D. Alamarguy, et al.. An ultra-thin SiO2 ALD layer for void-free bonding of III–V material on silicon. Microelectronic Engineering, Elsevier, 2016, 162, pp.40 - 44. ⟨10.1016/j.mee.2016.05.001⟩. ⟨hal-01449032⟩

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