An ultra-thin SiO2 ALD layer for void-free bonding of III–V material on silicon

A. Talneau; K. Pantzas; A. Durnez; G. Patriarche; D. Alamarguy; E. Le Bourhis

doi:10.1016/j.mee.2016.05.001

Journal articles

An ultra-thin SiO2 ALD layer for void-free bonding of III–V material on silicon

A. Talneau ¹ K. Pantzas ¹ A. Durnez ¹ G. Patriarche ¹ D. Alamarguy ² E. Le Bourhis ³

1 LPN - Laboratoire de photonique et de nanostructures

2 GeePs - Laboratoire Génie électrique et électronique de Paris

3 PPRIME - Institut Pprime

Keywords : ALD process Dangling bonds Hybrid interface Hybrid bonding XPS X-ray Photoélectron Spectroscopy III-V on Silicon SiO2 ALD layer

Document type :

Journal articles

Domain :

Engineering Sciences [physics] / Materials

Engineering Sciences [physics] / Optics / Photonic

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

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https://hal-centralesupelec.archives-ouvertes.fr/hal-01449032
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Submitted on : Monday, January 30, 2017 - 1:48:03 AM
Last modification on : Saturday, June 25, 2022 - 10:23:32 PM

An ultra-thin SiO2 ALD layer for void-free bonding of III–V material on silicon

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An ultra-thin SiO2 ALD layer for void-free bonding of III–V material on silicon

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