Electronic properties of thin GaP layers grown on silicon wafers - CentraleSupélec

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Electronic properties of thin GaP layers grown on silicon wafers

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Artem Baranov

Function : Author

Laboratoire Génie électrique et électronique de Paris

Saint Petersburg Academic University

A.S. Gudovskikh

Function : Author

Saint Petersburg Electrotechnical University

Saint Petersburg Academic University

I. Morozov

Function : Author

Saint Petersburg Academic University

A. Mozharov

Function : Author

Saint Petersburg Academic University

Arouna Darga

Function : Author
PersonId : 13635
IdHAL : arouna-darga
IdRef : 123194911

Université Pierre et Marie Curie - Paris 6

Laboratoire Génie électrique et électronique de Paris

Jean-Paul Kleider

Function : Author
PersonId : 5984
IdHAL : jean-paul-kleider
ORCID : 0000-0003-4388-6326
IdRef : 03273039X

Laboratoire Génie électrique et électronique de Paris

Domains

Materials Science [cond-mat.mtrl-sci] Micro and nanotechnologies/Microelectronics Electric power Optics / Photonic Materials

Jean-Paul KLEIDER : Connect in order to contact the contributor

https://hal-centralesupelec.archives-ouvertes.fr/hal-01474776

Submitted on : Thursday, February 23, 2017-10:45:13 AM

Last modification on : Friday, March 24, 2023-2:53:03 PM

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hal-01474776 , version 1 (23-02-2017)

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HAL Id : hal-01474776 , version 1

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Artem Baranov, A.S. Gudovskikh, I. Morozov, A. Mozharov, Arouna Darga, et al.. Electronic properties of thin GaP layers grown on silicon wafers. Journées Nationales du Photovoltaïque (JNPV 2016), Nov 2016, Dourdan, France. ⟨hal-01474776⟩

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