R. Schuster, V. Kirchner, P. Allongue, and G. Ertl, Electrochemical Micromachining, Science, vol.289, issue.5476, pp.98-101, 2000.
DOI : 10.1126/science.289.5476.98
URL : https://hal.archives-ouvertes.fr/hal-01002635

C. Lee, Y. Kanda, T. Hirai, S. Ikeda, and M. Matsumura, Electrochemical Grooving of Si Wafers Using Catalytic Wire Electrodes in HF Solution, Journal of The Electrochemical Society, vol.53, issue.2, 2009.
DOI : 10.1016/S1388-2481(03)00146-2

M. S. Salem, C. Lee, S. Ikeda, and M. Matsumura, Acceleration of groove formation in silicon using catalytic wire electrodes for development of a slicing technique, Journal of Materials Processing Technology, vol.210, issue.2, pp.330-334, 2010.
DOI : 10.1016/j.jmatprotec.2009.09.019

C. Lee, Y. Kanda, S. Ikeda, and M. Matsumura, Electrochemical method for slicing Si blocks into wafers using platinum wire electrodes, Solar Energy Materials and Solar Cells, vol.95, issue.2, 2011.
DOI : 10.1016/j.solmat.2010.10.009

T. Sugita, C. Lee, S. Ikeda, and M. Matsumura, Formation of Through-Holes in Si Wafers by Using Anodically Polarized Needle Electrodes in HF Solution, ACS Applied Materials & Interfaces, vol.3, issue.7, pp.2417-2424, 2011.
DOI : 10.1021/am2003284

T. Sugita, K. Hiramatsu, S. Ikeda, and M. Matsumura, Pore Formation in a p-Type Silicon Wafer Using a Platinum Needle Electrode with Application of Square-Wave Potential Pulses in HF Solution, ACS Applied Materials & Interfaces, vol.5, issue.4, pp.1262-1268, 2013.
DOI : 10.1021/am302314y

T. Fukushima, A. Ohnaka, M. Takahashi, and H. Kobayashi, Fabrication of Low Reflectivity Poly-Crystalline Si Surfaces by Structure Transfer Method, Electrochemical and Solid-State Letters, vol.153, issue.2, 2011.
DOI : 10.1016/j.electacta.2007.01.035

M. Takahashi, T. Fukushima, Y. Seino, W. Kim, K. Imamura et al., Surface Structure Chemical Transfer Method for Formation of Ultralow Reflectivity Si Surfaces, Journal of the Electrochemical Society, vol.160, issue.8, pp.160-443, 2013.
DOI : 10.1149/2.044308jes

K. Imamura, T. Akai, and H. Kobayashi, High aspect ratio Si micro-holes formed by wet etching using Pt needles, Materials Research Express, vol.2, issue.7
DOI : 10.1088/2053-1591/2/7/075901

B. P. Azeredo, Y. Lin, A. Avagyan, M. Sivaguru, K. Hsu et al., Direct Imprinting of Porous Silicon via Metal-Assisted Chemical Etching, Advanced Functional Materials, vol.1, issue.17, pp.2929-2939, 2016.
DOI : 10.1038/nmat702

L. Zhang, J. Zhang, D. Yuan, L. Han, J. Zhou et al., Electrochemical nanoimprint lithography directly on n-type crystalline silicon (111) wafer, Electrochemistry Communications, vol.75, pp.75-2017
DOI : 10.1016/j.elecom.2016.12.004

J. Zhang, L. Zhang, W. Wang, L. Han, J. Jia et al., Contact electrification induced interfacial redox reactions and the electrochemical nanoimprint lithography directly in n-type gallium arsenate wafer, Chem. Sci, pp.10-1039, 2016.

N. A. Senior and R. C. Newman, Synthesis of tough nanoporous metals by controlled electrolytic dealloying, Nanotechnology, vol.17, issue.9, pp.2311-231610, 2006.
DOI : 10.1088/0957-4484/17/9/040

T. Fujita, L. Qian, K. Inoke, J. Erlebacher, and M. Chen, Three-dimensional morphology of nanoporous gold, Applied Physics Letters, vol.92, issue.25, 2008.
DOI : 10.1103/PhysRevLett.78.2248

E. Torralba, S. L. Gall, R. Lachaume, V. Magnin, J. Harari et al., Tunable Surface Structuration of Silicon by Metal Assisted Chemical Etching with Pt Nanoparticles under Electrochemical Bias, ACS Applied Materials & Interfaces, vol.8, issue.45, pp.31375-31384, 2016.
DOI : 10.1021/acsami.6b09036
URL : https://hal.archives-ouvertes.fr/hal-01392805