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Piezoelectric conversion with InGaN/GaN nanowire heterostructures

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Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics

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Submitted on : Thursday, September 21, 2017-1:08:25 PM

Last modification on : Thursday, February 9, 2023-4:52:53 AM

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hal-01591417 , version 1 (21-09-2017)

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  • HAL Id : hal-01591417 , version 1

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Nicoletta Jegenyes, Martina Morassi, Pascal Chrétien, Laurent Travers, L Lu, et al.. Piezoelectric conversion with InGaN/GaN nanowire heterostructures. 12th International Conference on Nitride Semiconductors - ICNS 12, Jul 2017, Strasbourg, France. ⟨hal-01591417⟩

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UPMC CNRS CENTRALESUPELEC GEEPS PHEMADIC UNIV-PARIS-SACLAY SORBONNE-UNIVERSITE SU-SCIENCES UP-SCIENCES GS-ENGINEERING GS-PHYSIQUE INSTITUT-SCIENCES-LUMIERE
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