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Piezoelectric conversion with InGaN/GaN nanowire heterostructures

Nicoletta Jegenyes 1 Martina Morassi 1 Pascal Chrétien 2 Laurent Travers 1 L Lu 3 Jean-Christophe Harmand 1 Frédéric Houzé 2 Maria Tchernycheva 3 Noelle Gogneau 1 
1 C2N - Centre de Nanosciences et de Nanotechnologies [Marcoussis]
2 GeePs - Laboratoire Génie électrique et électronique de Paris
3 C2N - Centre de Nanosciences et de Nanotechnologies [Orsay]
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Conference papers
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01591417
Contributor : Frédéric Houzé Connect in order to contact the contributor
Submitted on : Thursday, September 21, 2017 - 1:08:25 PM
Last modification on : Saturday, June 25, 2022 - 10:26:33 PM

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  • HAL Id : hal-01591417, version 1

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UPMC | CNRS | CENTRALESUPELEC | GEEPS | PHEMADIC | UNIV-PARIS-SACLAY | SORBONNE-UNIVERSITE | SU-SCIENCES | UP-SCIENCES | GS-ENGINEERING | INSTITUT-SCIENCES-LUMIERE

Citation

Nicoletta Jegenyes, Martina Morassi, Pascal Chrétien, Laurent Travers, L Lu, et al.. Piezoelectric conversion with InGaN/GaN nanowire heterostructures. 12th International Conference on Nitride Semiconductors - ICNS 12, Jul 2017, Strasbourg, France. ⟨hal-01591417⟩

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