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Micro-photoluminescence investigation of the doping level in single GaAs crystals epitaxially grown on silicon for multijunction solar cells

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https://hal-centralesupelec.archives-ouvertes.fr/hal-01629676
Contributor : Alexandre Jaffré <>
Submitted on : Monday, November 6, 2017 - 4:29:52 PM
Last modification on : Wednesday, September 16, 2020 - 5:50:58 PM

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  • HAL Id : hal-01629676, version 1

Citation

Alexandre Jaffré, José Alvarez, Denis Mencaraglia, James Patrick Connolly, Timothée Molière, et al.. Micro-photoluminescence investigation of the doping level in single GaAs crystals epitaxially grown on silicon for multijunction solar cells. European Materials Research Society, May 2017, Strasbourg, France. ⟨hal-01629676⟩

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