Micro-photoluminescence investigation of the doping level in single GaAs crystals epitaxially grown on silicon for multijunction solar cells - Archive ouverte HAL Access content directly
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Micro-photoluminescence investigation of the doping level in single GaAs crystals epitaxially grown on silicon for multijunction solar cells

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hal-01629676 , version 1 (06-11-2017)

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  • HAL Id : hal-01629676 , version 1

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Alexandre Jaffré, José Alvarez, Denis Mencaraglia, James Patrick Connolly, Timothée Molière, et al.. Micro-photoluminescence investigation of the doping level in single GaAs crystals epitaxially grown on silicon for multijunction solar cells. European Materials Research Society, May 2017, Strasbourg, France. ⟨hal-01629676⟩
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