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Poster communications

Micro-photoluminescence investigation of the doping level in single GaAs crystals epitaxially grown on silicon for multijunction solar cells

Alexandre Jaffré 1 José Alvarez 1 Denis Mencaraglia 1 James Patrick Connolly 2 Timothée Molière 1 Jean-Paul Kleider 1 Laetitia Vincent 3 Géraldine Hallais 3 Charles Renard 3 Daniel Bouchier 3 
1 GeePs - Laboratoire Génie électrique et électronique de Paris
2 UPV - Universitat Politècnica de València
3 IEF - Institut d'électronique fondamentale
Document type :
Poster communications
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https://hal-centralesupelec.archives-ouvertes.fr/hal-01629676
Contributor : Alexandre Jaffré Connect in order to contact the contributor
Submitted on : Monday, November 6, 2017 - 4:29:52 PM
Last modification on : Sunday, June 26, 2022 - 9:57:57 AM

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  • HAL Id : hal-01629676, version 1

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UPMC | CNRS | CENTRALESUPELEC | GEEPS | PHEMADIC | UNIV-PARIS-SACLAY | SORBONNE-UNIVERSITE | SU-SCIENCES | GS-ENGINEERING | INSTITUT-SCIENCES-LUMIERE

Citation

Alexandre Jaffré, José Alvarez, Denis Mencaraglia, James Patrick Connolly, Timothée Molière, et al.. Micro-photoluminescence investigation of the doping level in single GaAs crystals epitaxially grown on silicon for multijunction solar cells. European Materials Research Society, May 2017, Strasbourg, France. ⟨hal-01629676⟩

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