Micro-photoluminescence investigation of the doping level in single GaAs crystals epitaxially grown on silicon for multijunction solar cells - CentraleSupélec Access content directly
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Micro-photoluminescence investigation of the doping level in single GaAs crystals epitaxially grown on silicon for multijunction solar cells

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Materials Science [cond-mat.mtrl-sci] Micro and nanotechnologies/Microelectronics Optics / Photonic Materials

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https://hal-centralesupelec.archives-ouvertes.fr/hal-01629676

Submitted on : Monday, November 6, 2017-4:29:52 PM

Last modification on : Friday, March 24, 2023-2:53:05 PM

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hal-01629676 , version 1 (06-11-2017)

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  • HAL Id : hal-01629676 , version 1

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Alexandre Jaffré, José Alvarez, Denis Mencaraglia, James Patrick Connolly, Timothée Molière, et al.. Micro-photoluminescence investigation of the doping level in single GaAs crystals epitaxially grown on silicon for multijunction solar cells. European Materials Research Society, May 2017, Strasbourg, France. ⟨hal-01629676⟩

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UPMC CNRS CENTRALESUPELEC GEEPS PHEMADIC UNIV-PARIS-SACLAY SORBONNE-UNIVERSITE SU-SCIENCES GS-ENGINEERING GS-PHYSIQUE INSTITUT-SCIENCES-LUMIERE
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