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, Gwénaëlle Hamon received her master's degree in physics and nanosciences from Phelma-Grenoble Institute of Technology, France, in 2014, specializing in optics and microelectronics. Currently, she is working toward the PhD at Ecole Polytechnique in the joint research team between TOTAL and LPICM, under the supervision of P. Roca i Cabarrocas. She works on III-V/Si tandem solar cells using low temperature plasma-assisted epitaxy of Si on MOVPE grown III-V materials
, He made the first x-ray detector based on epitaxial diamond by BEN-MPCVD at CEA. During one year at GEMaC/CNRS as a postdoc researcher, he succeeded in adapting MOCVD technology on a commercial MPCVD reactor for n-type doping of diamond. Currently, he is at LPICM/Ecole Polytechnique working on the epitaxial integration of Si(Ge) on III-V at low temperature PECVD for tandem solar cells, Nicolas Vaissiere was qualified to PhD level in 2014 from ENS Cachan
His PhD research work was performed with the Laboratory of Physics of Interfaces and Thin Films (LPICM-CNRS) and Alcatel-Lucent Bell Labs France (III-VLab). In 2015, he joined the Fraunhofer Institute for solar energy systems ,
, Then, he undertook his PhD in CEA Leti in collaboration with CEA INES on high efficiency heterojunction solar cells. Since 2014, he has been working on advanced electrical characterization and modeling for next generations of solar cell devices in Group of Electrical Engineering, Paris (GeePs) and more recently in Institut PhotoVoltaïque d, 2010.
, His current fields of interest are linked to the scanning probe and confocal microscopy characterization techniques applied to materials (silicon-based structures, he has been working as a researcher at the laboratory GeePs, 2004.
, He has made a series of original research works on chemical vapor deposition systems, semiconductor nanowire, low-temperature semiconductor epitaxial growth, and passivation of c-Si solar cells. He has published more than 25 papers in Nature Communications, Progress in Photovoltaics, 2011.
He is leading the physics and electronics of materials, devices, interfaces, and contacts division at GeePs, where he works as a CNRS director of research, Kleider holds his engineering degree from Ecole Supérieure d'Electricité in 1984 and received his PhD from the University Pierre et Marie Curie, 1987. ,
, He has been working on epitaxial growth since 1987. He received his PhD in microelectronics from the University of Lille and joined France Telecom in 1993, 2004.
, Actually, he focused on selective area growth technique, III-V integration on silicon and photovoltaic tandem solar cells
, After a postdoc at Princeton University, he joined the LPICM, where he holds a position as a CNRS director of research. He has a long experience in the plasma deposition of silicon based thin films. He was the recipient of the silver medal from CNRS in 2011